Initial Growth of GaN and InN Over GaAs (110) Substrates
نویسندگان
چکیده
We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density functional theory. We analyzed the changes in the bond-lengths and in the bond-angles before and after deposition, as well as the total energy behaviour with the adsorbate chemical potential variation. Our results show that the GaN growth over GaAs (110) is energetically more favorable than the InN growth. However, the resulting InN film can be cubic only if we apply small strains on the substrate, while the GaN one is hexagonal.
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